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| 2SK3690-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) TO-220AB 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. Power Dissipation Operating and Storage Temperature range Symbol VDS VDSX ID ID(puls] VGS IAR EAS EAR dVDS/dt dV/dt PD Tch Tstg Ratings 600 600 4.5 18 30 4.5 261.1 8 20 5 80 2.02 +150 -55 to +150 Unit V V A A V A mJ mJ Remarks VGS=-30V Equivalent circuit schematic Drain(D) Gate(G) Note *1 Note *2 Note *3 Source(S) Note *1:Tch < 150C,Repetitive and Non-repetitive = Note *2:StartingTch=25C,IAS=1.8A,L= 148mH, VCC=60V,RG=50 EAS limited by maximum channel temperature and Avalanche current. See to the `Avalanche Energy' graph Note *3:Repetitive rating:Pulse width limited by maximum channel temperature. See to the `Transient Thermal impedance' graph. < < < Note *4:IF = -ID, -di/dt = 50A/s,VCC= BVDSS,Tch=150C kV/s VDS<600V = kV/s Note *4 Tc=25C W Ta=25C C C Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time ton Turn-Off Time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol BVDSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VSD trr Qrr Symbol Rth(ch-c) Rth(ch-a) Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS Tch=25C VDS=600V VGS=0V Tch=125C VDS=480V VGS=0V VGS=30V VDS=0V ID=2.25A VGS=10V ID=2.25A VDS=25V VDS=25V VGS=0V f=1MH VCC=300V ID=2.25A VGS=10V RGS=10 VCC=300V ID=4.5A VGS=10V IF=4.5A VGS=0V Tch=25C IF=4.5A VGS=0V -di/dt=100A/s Tch=25C Test Conditions channel to case channel to ambient Min. 600 3.0 Typ. Max. 5.0 25 250 100 2.3 600 90 5 27 6 45 7.5 23 8 4.5 1.50 Units V V A A nA S pF 2.5 10 1.8 5 400 60 3 18 4 30 5 15 5.5 3 1.00 0.7 3.5 ns nC V s C Thermal characteristics Item Thermal resistance www.fujielectric.co.jp/fdt/scd Min. Typ. Max. 1.563 62 Units C/W C/W 1 2SK3690-01 Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET 90 80 70 60 Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25 C 8 7 20V 10V 8V 6.5V 6 5 50 PD [W] ID [A] 6.0V 4 40 3 30 2 20 10 0 0 25 50 75 100 125 150 1 VGS=5.5V 0 0 4 8 12 16 20 24 Tc [C] VDS [V] 10 Typical Transfer Characteristic ID=f(VGS):80 s pulse test,VDS=25V,Tch=25C Typical Transconductance gfs=f(ID):80 s pulse test,VDS=25V,Tch=25C 10 ID[A] gfs [S] 1 1 0.1 0 1 2 3 4 5 6 7 8 9 10 0.1 0.1 1 10 VGS[V] ID [A] 4.00 3.75 3.50 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 s pulse test,Tch=25C VGS=5.5V 6.0V 6.0 5.5 5.0 4.5 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=2.25A,VGS=10V 3.25 RDS(on) [ ] 4.0 3.00 2.75 2.50 2.25 1.5 2.00 1.0 1.75 1.50 0 1 2 3 4 5 6 7 8 9 0.5 0.0 -50 -25 0 25 50 75 100 125 150 6.5V 8V 10V 20V RDS(on) [ ] 3.5 3.0 2.5 typ. 2.0 max. ID [A] Tch [C] 2 2SK3690-01 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250uA FUJI POWER MOSFET Typical Gate Charge Characteristics VGS=f(Qg):ID=4.5A,Tch=25C 14 7.0 6.5 6.0 5.5 5.0 12 Vcc= 120V max. 300V 10 480V 8 VGS(th) [V] 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 0 0 5 2 4 min. VGS [V] 6 10 15 20 25 Tch [C] Qg [nC] 10 3 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 10 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 s pulse test,Tch=25C Ciss 10 2 C [pF] IF [A] Coss 1 1 10 Crss 10 0 10 0 10 1 10 2 10 3 0.1 0.0 0.5 1.0 1.5 2.0 VDS [V] VSD [V] 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10 300 Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=60V,I(AV)<=4.5A IAS=1.8A tf 250 10 2 td(off) 200 IAS=2.7A EAV [mJ] t [ns] 150 td(on) 10 1 IAS=4.5A 100 tr 50 10 0 0 10 -1 10 0 10 1 0 25 50 75 100 125 150 ID [A] starting Tch [C] 3 2SK3690-01 FUJI POWER MOSFET 10 1 Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C,Vcc=60V Single Pulse Avalanche Current I AV [A] 10 0 10 -1 10 -8 10 -2 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] 10 1 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 0 Zth(ch-c) [C/W] 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] http://www.fujielectric.co.jp/fdt/scd/ 4 |
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